D2208UK

Specifications

Maximum Gate Threshold Voltage V

7

Pin Sayısı

5

Transistor Polarity

N-Channel

Id Continuous Drain Current

16 A

Technology

Si

Operating Frequency

500 MHz

Maximum Continuous Drain Current A

16

Typical Forward Transconductance S

1.44(Min)

Montaj Stili

SMD/SMT

Typical Reverse Transfer Capacitance Vds Pf

8(Max)@12.5V

Number Of Elements Per Chip

2

Transistor Type

DMOS FET

Maximum Idss Ua

8000

Typical Power Gain Db

10(Min)

Package Width

6.47

Vgs Gatesource Voltage

20 V

Maximum Drain Source Voltage V

40

Minimum Frequency Mhz

1

Maks. Çalışma Sıcaklığı

+ 150 C

Kılıf / Paket

DK

Tip

RF Power MOSFET

Gain

10 dB

Pd Power Dissipation

134 W

Military

No

Maximum Gate Source Voltage V

±20

Pcb Changed

5

Hts

8541.29.00.95

Parça Durumu

Active

Maximum Gate Source Leakage Current Na

4000

Maximum Operating Temperature C

200

Typical Output Capacitance Vds Pf

80(Max)@12.5V

Package Length

24.76

RoHS Durumu

RoHS Compliant

Process Technology

DMOS

Supplier Package

Case DK

Mounting

Screw

Package Height

4.82

Vgs Th Gatesource Threshold Voltage

0.5 V to 7 V

Maximum Frequency Mhz

1000

Configuration

Dual Common Source