D2205UK

Specifications

Maximum Gate Source Leakage Current Na

1000

Parça Durumu

Active

Package Length

18.92

Typical Output Capacitance Vds Pf

30(Max)@12.5V

Maximum Operating Temperature C

200

Eccn Us

EAR99

Output Power W

7.5

RoHS Durumu

RoHS Compliant

Maximum Gate Source Voltage V

±20

Maximum Vswr

20

Pcb Changed

3

Hts

8541.29.00.95

Maximum Power Dissipation Mw

35000

Standard Package Name

Module

Gain

10 dB

Typical Drain Efficiency

40(Min)

Material

Si

Military

No

Maximum Drain Source Voltage V

40

Minimum Operating Temperature C

-65

Maks. Çalışma Sıcaklığı

+ 150 C

Minimum Frequency Mhz

1

Kılıf / Paket

DP

Output Power

7.5 W

Configuration

Single

Montaj Stili

SMD/SMT

Maximum Idss Ua

2000

Number Of Elements Per Chip

1

Typical Reverse Transfer Capacitance Vds Pf

3(Max)@12.5V

Typical Power Gain Db

10(Min)

Vds Drainsource Breakdown Voltage

40 V

Package Width

6.35

Typical Input Capacitance Vds Pf

36(Max)@0V

Transistor Polarity

N-Channel

Mounting

Screw

Supplier Package

Case DP

Technology

Si

Id Continuous Drain Current

6 A

Package Height

5.08

Operating Frequency

1 GHz