D2022UK

Specifications

Qualification Status

Not Qualified

Military

No

Mounting

Screw

Ds Breakdown Voltagemin

65 V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Maximum Continuous Drain Current A

5

Output Power

25 W

Technology

Si

Maximum Frequency Mhz

1000

Additional Feature

LOW NOISE

Maximum Gate Source Leakage Current Na

1000

Kurşunsuz Kodu

No

Operating Frequency

500 MHz

Case Connection

SOURCE

Number Of Elements Per Chip

2

Package Shape

RECTANGULAR

Terminal Formu

FLAT

Rohs Code

No

Id Continuous Drain Current

5 A

Part Life Cycle Code

Active

Number Of Elements

2

Vds Drainsource Breakdown Voltage

65 V

REACH Uyumluluk Kodu

compliant

Configuration

Dual Common Source

Aec Qualified

No

Maximum Gate Threshold Voltage V

7

Gain

13 dB

Ihs Manufacturer

SEMELAB LTD

Transistor Element Material

SILICON

Maks. Çalışma Sıcaklığı

+ 150 C

Risk Rank

5.77

Maximum Power Dissipation Mw

125000

Package Length

18.9

ECCN Kodu

EAR99

Maximum Gate Source Voltage V

±20

Jesd30 Code

R-CDFM-F4

Transistor Application

AMPLIFIER

Package Height

5.08

Typical Power Gain Db

13(Min)

Material

Si