D2021UK

Specifications

Number Of Elements Per Chip

1

Package Shape

RECTANGULAR

Maximum Gate Source Leakage Current Na

1000

Kurşunsuz Kodu

Yes

Operating Frequency

1 GHz

Output Power W

7.5

Terminal Kaplaması

GOLD

Output Power

7.5 W

Technology

Si

Maximum Frequency Mhz

1000

Additional Feature

LOW NOISE

Standard Package Name

SOP

Qualification Status

Not Qualified

Military

No

Mounting

Surface Mount

Ds Breakdown Voltagemin

65 V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Maximum Continuous Drain Current A

3

Maximum Power Dissipation Mw

17500

ECCN Kodu

EAR99

Package Length

5.08

Jesd30 Code

R-XDSO-G8

Maximum Gate Source Voltage V

±20

Part Package Code

SOT

Transistor Application

AMPLIFIER

Ihs Manufacturer

SEMELAB LTD

Transistor Element Material

SILICON

Maks. Çalışma Sıcaklığı

+ 150 C

Risk Rank

5.12

Configuration

Single Dual Drain Dual Gate Quad Source

REACH Uyumluluk Kodu

compliant

JESD-609 Kodu

e4

Maximum Gate Threshold Voltage V

7

Gain

13 dB

Terminal Formu

GULL WING

Rohs Code

Yes

Id Continuous Drain Current

3 A

Part Life Cycle Code

Active

Number Of Elements

1

Vds Drainsource Breakdown Voltage

65 V