D2013UK

Specifications

Maximum Power Dissipation Mw

83000

Montaj Stili

SMD/SMT

Package Length

24.76

Maximum Gate Source Voltage V

±20

Process Technology

DMOS

Typical Reverse Transfer Capacitance Vds Pf

2(Max)@28V

Pcb Changed

5

Minimum Operating Temperature C

-65

Parça Durumu

Active

Pin Sayısı

5

Maks. Çalışma Sıcaklığı

+ 150 C

Channel Mode

Enhancement

RoHS Durumu

RoHS Compliant

Configuration

Dual Common Source

Typical Forward Transconductance S

0.72(Min)

Gain

10 dB

Eccn Us

EAR99

Typical Drain Efficiency

40(Min)

Id Continuous Drain Current

4 A

Minimum Frequency Mhz

1

Channel Type

N

Vds Drainsource Breakdown Voltage

65 V

Package Width

6.47

Number Of Elements Per Chip

2

Maximum Operating Temperature C

200

Supplier Package

Case DK

Kılıf / Paket

DK

Typical Input Capacitance Vds Pf

48(Max)@0V

Output Power W

20

Operating Frequency

1 GHz

Typical Output Capacitance Vds Pf

24(Max)@28V

Transistor Polarity

N-Channel

Output Power

20 W

Hts

8541.29.00.95

Maximum Frequency Mhz

2000

Technology

Si

Typical Power Gain Db

10(Min)

Package Height

4.82

Maximum Vswr

20(Min)

Military

No