D2009UK

Specifications

Maximum Gate Source Leakage Current Na

1000

Typical Input Capacitance Vds Pf

24(Max)@28V

Operating Frequency

1 GHz

Typical Output Capacitance Vds Pf

12(Max)@28V

Transistor Polarity

N-Channel

Package Width

6.35

Number Of Elements Per Chip

2

Maximum Operating Temperature C

200

Supplier Package

Case DQ

Kılıf / Paket

DQ

Package Height

5.08

Typical Power Gain Db

10(Min)

Military

No

Mounting

Screw

Material

Si

Maximum Vswr

20

Maximum Drain Source Voltage V

65

Maximum Continuous Drain Current A

2

Output Power

10 W

Hts

8541.29.00.75

Technology

Si

Maximum Frequency Mhz

1000

Typical Reverse Transfer Capacitance Vds Pf

1(Max)@28V

Process Technology

DMOS

Minimum Operating Temperature C

-65

Pcb Changed

5

Maks. Çalışma Sıcaklığı

+ 150 C

RoHS Durumu

RoHS Compliant

Parça Durumu

Active

Pin Sayısı

5

Maximum Power Dissipation Mw

58000

Montaj Stili

SMD/SMT

Package Length

18.9

Maximum Gate Source Voltage V

±20

Id Continuous Drain Current

2 A

Minimum Frequency Mhz

50

Vds Drainsource Breakdown Voltage

65 V

Typical Forward Transconductance S

0.36(Min)

Configuration

Dual Common Source

Maximum Gate Threshold Voltage V

7