D2006UK

Specifications

Operating Frequency

1 GHz

Typical Output Capacitance Vds Pf

18(Max)@28V

Transistor Polarity

N-Channel

Typical Input Capacitance Vds Pf

36(Max)@0V

Maximum Gate Source Leakage Current Na

1000

Kılıf / Paket

DK

Maximum Operating Temperature C

200

Supplier Package

Case DK

Number Of Elements Per Chip

2

Package Width

6.47

Maximum Drain Source Voltage V

65

Maximum Vswr

20(Min)

Material

Si

Mounting

Screw

Military

No

Typical Power Gain Db

13(Min)

Package Height

4.82

Maximum Frequency Mhz

2000

Technology

Si

Hts

8541.29.00.95

Output Power

15 W

Parça Durumu

Active

Pin Sayısı

5

Maks. Çalışma Sıcaklığı

+ 150 C

RoHS Durumu

RoHS Compliant

Pcb Changed

5

Minimum Operating Temperature C

-65

Process Technology

DMOS

Typical Reverse Transfer Capacitance Vds Pf

1.5(Max)@28V

Maximum Gate Source Voltage V

±20

Montaj Stili

SMD/SMT

Package Length

24.76

Maximum Power Dissipation Mw

70000

Vds Drainsource Breakdown Voltage

65 V

Id Continuous Drain Current

3 A

Typical Drain Efficiency

40

Maximum Idss Ua

600

Eccn Us

EAR99

Gain

13 dB

Maximum Gate Threshold Voltage V

7