D2004UK

Specifications

Channel Type

N

Minimum Frequency Mhz

0

Vds Drainsource Breakdown Voltage

65 V

Id Continuous Drain Current

2 A

Eccn Us

EAR99

Typical Drain Efficiency

40(Min)

Typical Forward Transconductance S

0.36(Min)

Configuration

Dual Common Source

Gain

10 dB

Minimum Operating Temperature C

-65

Pcb Changed

5

Maks. Çalışma Sıcaklığı

+ 150 C

Channel Mode

Enhancement

RoHS Durumu

RoHS Compliant

Parça Durumu

Active

Pin Sayısı

5

Typical Reverse Transfer Capacitance Vds Pf

1(Max)@28V

Process Technology

DMOS

Maximum Gate Source Voltage V

±20

Maximum Power Dissipation Mw

58000

Montaj Stili

SMD/SMT

Package Length

24.76

Mounting

Screw

Material

Si

Military

No

Maximum Vswr

20(Min)

Maximum Drain Source Voltage V

65

Maximum Continuous Drain Current A

2

Package Height

4.82

Typical Power Gain Db

10(Min)

Technology

Si

Maximum Frequency Mhz

2000

Output Power

10 W

Hts

8541.29.00.95

Typical Input Capacitance Vds Pf

24(Max)@0V

Transistor Polarity

N-Channel

Operating Frequency

1 GHz

Typical Output Capacitance Vds Pf

12(Max)@28V

Output Power W

10

Maximum Operating Temperature C

200