D2003UK

Specifications

Maximum Vswr

20(Min)

Material

Si

Maximum Drain Source Voltage V

65

Typical Power Gain Db

13(Min)

Package Height

4.82

Hts

8541.29.00.75

Typical Input Capacitance Vds Pf

12(Max)@28V

Transistor Polarity

N-Channel

Typical Output Capacitance Vds Pf

6(Max)@28V

Maximum Operating Temperature C

200

Supplier Package

Case DQ

Kılıf / Paket

DQ

Package Width

6.35

Minimum Frequency Mhz

50

RoHS

Details

Eccn Us

EAR99

Typical Drain Efficiency

40(Min)

Typical Forward Transconductance S

0.18(Min)

Pcb Changed

5

Minimum Operating Temperature C

-65

Pin Sayısı

5

Parça Durumu

Active

Channel Mode

Enhancement

RoHS Durumu

RoHS Compliant

Process Technology

DMOS

Typical Reverse Transfer Capacitance Vds Pf

0.5(Max)@28V

Birim Ağırlık

0.324873 oz

Tip

RF Power MOSFET

Montaj Stili

SMD/SMT

Mounting

Screw

Military

No

Maximum Continuous Drain Current A

1

Vgs Gatesource Voltage

20 V

Maximum Frequency Mhz

1000

Technology

Si

Output Power

5 W

Transistor Type

DMOS FET

Vgs Th Gatesource Threshold Voltage

1 V to 7 V

Output Power W

5

Pd Power Dissipation

35 W