D1209UK

Specifications

Maximum Drain Source Voltage V

40

Maximum Continuous Drain Current A

10

Polaritychannel Type

N-CHANNEL

Package Shape

RECTANGULAR

Maximum Operating Temperature C

200

Maximum Frequency Mhz

500

Pin Sayısı

5

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Qualification Status

Not Qualified

Ds Breakdown Voltagemin

40 V

Maximum Vswr

20

Channel Mode

Enhancement

Transistor Application

AMPLIFIER

Hts

8541.29.00.95

Maximum Idss Ua

1000

Process Technology

DMOS

Maximum Gate Source Voltage V

±20

Channel Type

N

Number Of Terminals

4

Typical Drain Efficiency

50(Min)

Pcb Changed

5

Typical Forward Transconductance S

0.8(Min)

Rohs Code

Yes

REACH Uyumluluk Kodu

compliant

Jesd30 Code

R-CDFM-F4

Number Of Elements

2

Terminal Pozisyonu

DUAL

Transistor Element Material

SILICON

Parça Durumu

Obsolete

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Maximum Power Dissipation Mw

100000

ECCN Kodu

EAR99

Configuration

Dual Common Source

Package Width

6.47

Maximum Gate Threshold Voltage V

7

Automotive

No

Maximum Gate Source Leakage Current Na

1000

Üretici Parça No

D1209UK

Material

Si

Supplier Package

Case DK