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TT Electronics / Semelab

D1030UK

RF MOSFETs Transistors

RoHS: Compliant

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Specifications

Id Continuous Drain Current
40 A
Number Of Elements Per Chip
2
Typical Power Gain Db
13(Min)
Package Width
10.16
Pcb Changed
5
Typical Output Capacitance Vds Pf
240(Max)@28V
Typical Drain Efficiency
50(Min)
Output Power
400 W
Maximum Vswr
20(Min)
Vds Drainsource Breakdown Voltage
70 V
Kılıf / Paket
DR
Process Technology
DMOS
Maximum Continuous Drain Current A
40
Gain
13 dB
Channel Type
N
Maximum Gate Source Voltage V
±20
Transistor Polarity
N-Channel
Maximum Frequency Mhz
200
Package Height
5.08
Pin Sayısı
5
Maximum Power Dissipation Mw
500000
Typical Forward Transconductance S
6.4(Min)
Typical Reverse Transfer Capacitance Vds Pf
20(Max)@28V
Technology
Si
Mounting
Screw
Configuration
Dual Common Source
Minimum Operating Temperature C
-65
Parça Durumu
Active
Typical Input Capacitance Vds Pf
480(Max)@28V
RoHS Durumu
RoHS Compliant
Eccn Us
EAR99
Montaj Stili
SMD/SMT
Supplier Package
Case DR
Minimum Frequency Mhz
1
Hts
8541.29.00.95
Package Length
34.03
Maximum Drain Source Voltage V
70
Material
Si
Maximum Operating Temperature C
200
Channel Mode
Enhancement

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