D1001UK

Specifications

Maximum Drain Source Resistance Mohm

1000(Typ)@20V

Maximum Operating Temperature C

200

Process Technology

DMOS

Technology

Si

Supplier Package

Case DA

Maximum Drain Source Voltage V

70

Transistor Polarity

N-Channel

Eccn Us

EAR99

Maximum Power Dissipation Mw

50000

Configuration

Single Dual Source

Package Width

9.52

Maximum Vswr

20(Min)

Mounting

Screw

Parça Durumu

Active

Number Of Elements Per Chip

1

Maximum Gate Source Voltage V

±20

Hts

8541.29.00.95

Rds On Drainsource Resistance

1 Ohms

Kılıf / Paket

DA

Pcb Changed

4

Package Length

24.76

Output Power W

20

Typical Input Capacitance Vds Pf

60(Max)@28V

RoHS Durumu

RoHS Compliant

Standard Package Name

Case DA

Channel Mode

Enhancement

Operating Frequency

175 MHz

Id Continuous Drain Current

5 A

Output Power

20 W

Typical Drain Efficiency

50(Min)

Maximum Continuous Drain Current A

5

Minimum Frequency Mhz

1

Military

No

Package Height

6.6

Gain

16 dB

Vds Drainsource Breakdown Voltage

70 V

Channel Type

N

Maximum Frequency Mhz

175

Minimum Operating Temperature C

-65

Maks. Çalışma Sıcaklığı

+ 150 C