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D2012UK

RF MOSFETs Transistors

RoHS: Compliant

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Specifications

Output Power
10 W
Montaj Stili
SMD/SMT
Gain
10 dB
Technology
Si
Kılıf / Paket
DP
Id Continuous Drain Current
4 A
Operating Frequency
1 GHz
Transistor Polarity
N-Channel
Maks. Çalışma Sıcaklığı
+ 150 C
Vds Drainsource Breakdown Voltage
65 V

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