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ULN2004APG,C,N

Toshiba Semiconductor and Storage

ULN2004APG,C,N

Arrays BJT Transistors

In StockRoHS: Compliant

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Specifications

Ambalaj
Tube
Kılıf / Paket
16-DIP (0.300, 7.62mm)
Max Collector Current
500mA
Transistor Type
7 NPN Darlington
Parça Durumu
Obsolete
Collector Emitter Voltage Vceo
1.6V
RoHS Durumu
RoHS Compliant
Yayın Yılı
2017
Power Max
1.47W
Vce Saturation Max Ib Ic
1.6V @ 500μA, 350mA
Montaj Tipi
Through Hole
Çalışma Sıcaklığı
-40°C~85°C TA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collectoremitter Breakdown Voltage
50V
Montaj
Through Hole
Temel Parça No
ULN200*A
Max Power Dissipation
1.47W
Current Collector Cutoff Max
50μA
Dc Current Gain Hfe Min Ic Vce
1000 @ 350mA 2V

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