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ULN2003APG,CN

Toshiba Semiconductor and Storage

ULN2003APG,CN

Arrays BJT Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

Max Collector Current
500mA
Transistor Type
7 NPN Darlington
Ambalaj
Tube
Kılıf / Paket
16-DIP (0.300, 7.62mm)
Collector Emitter Voltage Vceo
1.6V
Parça Durumu
Obsolete
Yayın Yılı
2011
Power Max
1.47W
RoHS Durumu
RoHS Compliant
Vce Saturation Max Ib Ic
1.6V @ 500μA, 350mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Çalışma Sıcaklığı
-40°C~85°C TA
Collectoremitter Breakdown Voltage
50V
Montaj Tipi
Through Hole
Montaj
Through Hole
Dc Current Gain Hfe Min Ic Vce
1000 @ 350mA 2V
Current Collector Cutoff Max
50μA
Temel Parça No
ULN200*A
Max Power Dissipation
1.47W

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