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ULN2003AFWG,O,N,E

Toshiba Semiconductor and Storage

ULN2003AFWG,O,N,E

Arrays BJT Transistors

In StockRoHS: Compliant

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Specifications

Montaj Tipi
Surface Mount
Currentcollector Ic Max
500mA
Collectoremitter Breakdown Voltage
50V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Çalışma Sıcaklığı
-40°C~85°C TA
Max Breakdown Voltage
50V
Vce Saturation Max Ib Ic
1.6V @ 500μA, 350mA
Current Collector Cutoff Max
50μA
Dc Current Gain Hfe Min Ic Vce
1000 @ 350mA 2V
Temel Parça No
ULN200*A
Max Power Dissipation
1.25W
Montaj
Surface Mount
Pin Sayısı
16
Max Collector Current
500mA
Transistor Type
7 NPN Darlington
Ambalaj
Digi-Reel®
Tedarikçi Cihaz Paketi
16-SOL
Kılıf / Paket
16-SOIC (0.154, 3.90mm Width)
Yayın Yılı
2010
Power Max
1.25W
Voltage Collector Emitter Breakdown Max
50V
RoHS Durumu
RoHS Compliant
Collector Emitter Voltage Vceo
1.6V
Parça Durumu
Discontinued

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