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Toshiba Semiconductor and Storage

TRS20N65FB,S1Q

Rectifier Diode Array

RoHS: Compliant

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Compliant

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Specifications

Reverse Recovery Time Trr
0 ns
Ifsm Forward Surge Current
158 A
Operating Temperature Junction
175°C
Voltage Forward Vf Max If
1.6 V @ 10 A
Vrrm Repetitive Reverse Voltage
650 V
Current Average Rectified Io Per Diode
10A (DC)
Vf Forward Voltage
1.6 V
Technology
SiC
Pd Power Dissipation
214 W
Fabrika Paket Adedi
30
Voltage Dc Reverse Vr Max
650 V
Diode Configuration
1 Pair Common Cathode
Kılıf / Paket
TO-247-3
Tedarikçi Cihaz Paketi
TO-247
Temel Ürün No
TRS20N65
Speed
No Recovery Time > 500mA (Io)
RoHS
Details
Ürün Tipi
Schottky Diodes & Rectifiers
Montaj Tipi
Through Hole
Ir Reverse Current
500 nA
Configuration
Dual Anode Common Cathode
If Forward Current
20 A
Ambalaj
Tube
Paket
Tube
Ürün Durumu
Active
Current Reverse Leakage Vr
50 μA @ 650 V
Maks. Çalışma Sıcaklığı
+ 175 C
Montaj Stili
Through Hole
Diode Type
Silicon Carbide Schottky

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