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TRS12N65D,S1F

Toshiba Semiconductor and Storage

TRS12N65D,S1F

Rectifier Diode Array

In StockRoHS: Compliant

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Specifications

Diode Type
Schottky
Nem Hassasiyeti (MSL)
1 (Unlimited)
Max Repetitive Reverse Voltage Vrrm
650V
Parça Durumu
Obsolete
RoHS Durumu
RoHS Compliant
Current Reverse Leakage Vr
90μA @ 650V
Ambalaj
Tube
Max Reverse Voltage Dc
650V
Forward Current
6A
Montaj Tipi
Through Hole
Fabrika Tedarik Süresi
12 Weeks
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Montaj
Through Hole
Peak Reverse Current
90μA
Maks. Çalışma Sıcaklığı
175°C
Min. Çalışma Sıcaklığı
-55°C
Kılıf / Paket
TO-247-3
Diode Configuration
1 Pair Common Cathode
Current Average Rectified Io
6A DC
Yayın Yılı
2014
Max Forward Surge Current Ifsm
60A
Element Configuration
Common Cathode
Voltage Forward Vf Max If
1.7V @ 6A
Operating Temperature Junction
175°C Max
Weight
38.000013g
Average Rectified Current
6A
Forward Voltage
1.22V

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