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Toshiba Semiconductor and Storage

TPCP8407,LF

MOSFETs Transistors Arrays

In StockRoHS: Compliant
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  • 1+ pcs$0.90
  • 10+ pcs$0.85
  • 100+ pcs$0.80
  • 500+ pcs$0.75

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Specifications

Rds On Drainsource Resistance
62.8 mOhms, 82.2 mOhms
Birim Ağırlık
0.000600 oz
Power Max
690mW (Ta)
Gate Charge Qg Max Vgs
11.8nC @ 10V, 18nC @ 10V
Ambalaj
MouseReel
Configuration
Dual
Kılıf / Paket
8-SMD, Flat Lead
Maks. Çalışma Sıcaklığı
+ 175 C
Transistor Polarity
N-Channel, P-Channel
Seri
Automotive, AEC-Q101
Drain To Source Voltage Vdss
40V
Channel Mode
Enhancement
Transistor Type
1 N-Channel, 1 P-Channel
RoHS
Details
Montaj Tipi
Surface Mount
Tradename
U-MOSIV / U-MOSVI
Ürün Durumu
Active
Fabrika Paket Adedi
3000
Typical Turnoff Delay Time
17 ns, 126 ns
Fet Type
N and P-Channel
Rise Time
5 ns, 8 ns
Number Of Channels
1 Channel
Vgsth Max Id
3V @ 1mA
Technology
Si
Rds On Max Id Vgs
36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V
Id Continuous Drain Current
5 A
Ürün Tipi
MOSFET
Qualification
AEC-Q101
Montaj Stili
SMD/SMT
Vds Drainsource Breakdown Voltage
40 V
Fet Feature
Standard
Input Capacitance Ciss Max Vds
505pF @ 10V, 810pF @ 10V
Tedarikçi Cihaz Paketi
PS-8
Current Continuous Drain Id25
5A (Ta), 4A (Ta)
Qg Gate Charge
11.8 nC, 18 nC
Minimum Operating Temperature
- 55 C
Pd Power Dissipation
1.77 W
Vgs Gatesource Voltage
- 20 V, + 20 V
Çalışma Sıcaklığı
150°C
Typical Turnon Delay Time
12 ns, 25 ns

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