SSM6N7002KFU,LXH

Specifications

Pd Power Dissipation

500 mW

Vgs Gatesource Voltage

- 20 V, + 20 V

Typical Turnon Delay Time

5.5 ns

Çalışma Sıcaklığı

150°C

Vgs Th Gatesource Threshold Voltage

2.1 V

Fet Feature

Standard

Input Capacitance Ciss Max Vds

40pF @ 10V

Tedarikçi Cihaz Paketi

US6

Current Continuous Drain Id25

300mA (Ta)

Qg Gate Charge

390 pC

Qualification

AEC-Q101

Montaj Stili

SMD/SMT

Vds Drainsource Breakdown Voltage

60 V

Technology

Si

Rds On Max Id Vgs

1.5Ohm @ 100mA, 10V

Id Continuous Drain Current

300 mA

Ürün Tipi

MOSFET

Ürün Durumu

Active

Typical Turnoff Delay Time

38 ns

Fabrika Paket Adedi

3000

Rise Time

3.6 ns

Fet Type

2 N-Channel (Dual)

Number Of Channels

1 Channel

Vgsth Max Id

2.1V @ 250μA

Maks. Çalışma Sıcaklığı

+ 150 C

Seri

Automotive, AEC-Q101, U-MOSVII-H

Transistor Polarity

N-Channel

Drain To Source Voltage Vdss

60V

Transistor Type

1 N-Channel

Channel Mode

Enhancement

Montaj Tipi

Surface Mount

RoHS

Details

Gate Charge Qg Max Vgs

0.6nC @ 4.5V

Configuration

Single

Ambalaj

MouseReel

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Rds On Drainsource Resistance

1.5 Ohms

Power Max

285mW (Ta)