Volume pricing
- 1+ pcs$0.32
- 10+ pcs$0.30
- 100+ pcs$0.29
- 500+ pcs$0.27
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pd Power Dissipation
- 500 mW
- Vgs Gatesource Voltage
- - 20 V, + 20 V
- Typical Turnon Delay Time
- 5.5 ns
- Çalışma Sıcaklığı
- 150°C
- Vgs Th Gatesource Threshold Voltage
- 2.1 V
- Fet Feature
- Standard
- Input Capacitance Ciss Max Vds
- 40pF @ 10V
- Tedarikçi Cihaz Paketi
- US6
- Current Continuous Drain Id25
- 300mA (Ta)
- Qg Gate Charge
- 390 pC
- Qualification
- AEC-Q101
- Montaj Stili
- SMD/SMT
- Vds Drainsource Breakdown Voltage
- 60 V
- Technology
- Si
- Rds On Max Id Vgs
- 1.5Ohm @ 100mA, 10V
- Id Continuous Drain Current
- 300 mA
- Ürün Tipi
- MOSFET
- Ürün Durumu
- Active
- Typical Turnoff Delay Time
- 38 ns
- Fabrika Paket Adedi
- 3000
- Rise Time
- 3.6 ns
- Fet Type
- 2 N-Channel (Dual)
- Number Of Channels
- 1 Channel
- Vgsth Max Id
- 2.1V @ 250μA
- Maks. Çalışma Sıcaklığı
- + 150 C
- Seri
- Automotive, AEC-Q101, U-MOSVII-H
- Transistor Polarity
- N-Channel
- Drain To Source Voltage Vdss
- 60V
- Transistor Type
- 1 N-Channel
- Channel Mode
- Enhancement
- Montaj Tipi
- Surface Mount
- RoHS
- Details
- Gate Charge Qg Max Vgs
- 0.6nC @ 4.5V
- Configuration
- Single
- Ambalaj
- MouseReel
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Rds On Drainsource Resistance
- 1.5 Ohms
- Power Max
- 285mW (Ta)
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