Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Continuous Drain Current Id
- 300mA
- Gate Charge Qg Max Vgs
- 0.6nC @ 4.5V
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
- Ambalaj
- Tape & Reel (TR)
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- RoHS Durumu
- RoHS Compliant
- Fabrika Tedarik Süresi
- 12 Weeks
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Power Max
- 285mW
- Parça Durumu
- Active
- Max Power Dissipation
- 285mW
- Reference Standard
- AEC-Q101
- Yayın Yılı
- 2015
- Fet Type
- 2 N-Channel (Dual)
- Vgsth Max Id
- 2.1V @ 250μA
- Drain To Source Voltage Vdss
- 60V
- Montaj
- Surface Mount
- Montaj Tipi
- Surface Mount
- Terminal Formu
- GULL WING
- Drainsource On Resistancemax
- 1.75Ohm
- Jesd30 Code
- R-PDSO-G6
- Rds On Max Id Vgs
- 1.5 Ω @ 100mA, 10V
- Ds Breakdown Voltagemin
- 60V
- Terminal Sayısı
- 6
- Çalışma Sıcaklığı
- 150°C TJ
- Transistor Application
- SWITCHING
- Number Of Elements
- 2
- Drain Currentmax Abs Id
- 0.3A
- Fet Feature
- Standard
- Input Capacitance Ciss Max Vds
- 40pF @ 10V
- Kurşunsuz Kodu
- yes
- Operating Mode
- ENHANCEMENT MODE
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