Volume pricing
- 1+ pcs$0.63
- 10+ pcs$0.60
- 100+ pcs$0.56
- 500+ pcs$0.53
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- 6-WDFN Exposed Pad
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Ambalaj
- Tape & Reel (TR)
- Gate Charge Qg Max Vgs
- 3.6nC @ 4.5V
- Continuous Drain Current Id
- 4A
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 12 Weeks
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Power Max
- 2W
- RoHS Durumu
- RoHS Compliant
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vgsth Max Id
- 1V @ 1mA
- Fet Type
- 2 N-Channel (Dual)
- Yayın Yılı
- 2016
- Max Power Dissipation
- 2W
- Montaj
- Surface Mount
- Montaj Tipi
- Surface Mount
- Drain To Source Voltage Vdss
- 20V
- Drainsource On Resistancemax
- 0.033Ohm
- Terminal Formu
- NO LEAD
- Ds Breakdown Voltagemin
- 20V
- Rds On Max Id Vgs
- 33m Ω @ 4A, 4.5V
- Jesd30 Code
- S-PDSO-N6
- Number Of Elements
- 2
- Transistor Application
- SWITCHING
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Sayısı
- 6
- Operating Mode
- ENHANCEMENT MODE
- Input Capacitance Ciss Max Vds
- 410pF @ 10V
- Case Connection
- DRAIN
- Fet Feature
- Logic Level Gate, 1.5V Drive
- Drain Currentmax Abs Id
- 4A
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