Volume pricing
- 1+ pcs$0.30
- 10+ pcs$0.28
- 100+ pcs$0.27
- 500+ pcs$0.25
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate To Source Voltage Vgs
- 20V
- Ds Breakdown Voltagemin
- 30V
- Rds On Max Id Vgs
- 3.2 Ω @ 10mA, 4V
- Turn Off Delay Time
- 180 ns
- Radyasyon Dayanımı
- No
- Terminal Formu
- GULL WING
- Drainsource On Resistancemax
- 5.4Ohm
- Pin Sayısı
- 6
- Drain Currentmax Abs Id
- 0.1A
- Turn On Delay Time
- 35 ns
- Input Capacitance Ciss Max Vds
- 15.1pF @ 3V
- Fet Feature
- Standard
- Operating Mode
- ENHANCEMENT MODE
- Current Continuous Drain Id25
- 100mA Ta
- Terminal Sayısı
- 6
- Çalışma Sıcaklığı
- 150°C
- Transistor Application
- SWITCHING
- Number Of Elements
- 2
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Element Material
- SILICON
- RoHS Durumu
- RoHS Compliant
- Power Max
- 300mW
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Fabrika Tedarik Süresi
- 12 Weeks
- Parça Durumu
- Active
- Continuous Drain Current Id
- 100mA
- Ambalaj
- Tape & Reel (TR)
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Seri
- U-MOSIII
- Drain To Source Voltage Vdss
- 30V
- Montaj
- Surface Mount
- Montaj Tipi
- Surface Mount
- Fet Type
- 2 N-Channel (Dual)
- Yayın Yılı
- 2014
- Number Of Channels
- 2
- Vgsth Max Id
- 1.5V @ 100μA
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