Volume pricing
- 1+ pcs$0.22
- 10+ pcs$0.20
- 100+ pcs$0.19
- 500+ pcs$0.18
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain To Source Voltage Vdss
- 30V
- Montaj
- Surface Mount
- Montaj Tipi
- Surface Mount
- Power Dissipation
- 300mW
- Max Power Dissipation
- 300mW
- Vgsth Max Id
- 1.5V @ 100μA
- Yayın Yılı
- 2014
- Drain To Source Breakdown Voltage
- 30V
- Fet Type
- 2 N-Channel (Dual)
- RoHS Durumu
- RoHS Compliant
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 12 Weeks
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Ambalaj
- Tape & Reel (TR)
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
- Continuous Drain Current Id
- 100mA
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Fet Feature
- Logic Level Gate
- Input Capacitance Ciss Max Vds
- 13.5pF @ 3V
- Drain Currentmax Abs Id
- 0.1A
- Operating Mode
- ENHANCEMENT MODE
- REACH Uyumluluk Kodu
- unknown
- Çalışma Sıcaklığı
- 150°C TJ
- Terminal Sayısı
- 6
- Number Of Elements
- 2
- Transistor Application
- SWITCHING
- Jesd30 Code
- R-PDSO-G6
- Gate To Source Voltage Vgs
- 20V
- Rds On Max Id Vgs
- 3.6 Ω @ 10mA, 4V
- Terminal Formu
- GULL WING
- Drainsource On Resistancemax
- 6Ohm
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