SSM6L820R,LXHF

Specifications

Current Continuous Drain Id25

4A (Ta)

Qg Gate Charge

6.7 nC

Tedarikçi Cihaz Paketi

6-TSOP-F

Fet Feature

Standard

Input Capacitance Ciss Max Vds

310pF @ 15V, 480pF @ 10V

Vgs Th Gatesource Threshold Voltage

1 V

Pd Power Dissipation

1.4 W

Typical Turnon Delay Time

26 ns

Çalışma Sıcaklığı

150°C

Vgs Gatesource Voltage

- 8 V, + 12 V

Id Continuous Drain Current

4 A

Ürün Tipi

MOSFET

Rds On Max Id Vgs

39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V

Technology

Si

Vds Drainsource Breakdown Voltage

30 V

Qualification

AEC-Q200

Montaj Stili

SMD/SMT

Montaj Tipi

Surface Mount

RoHS

Details

Drain To Source Voltage Vdss

30V, 20V

Channel Mode

Enhancement

Maks. Çalışma Sıcaklığı

+ 150 C

Transistor Polarity

N-Channel, P-Channel

Number Of Channels

2 Channel

Vgsth Max Id

1V @ 1mA, 1.2V @ 1mA

Typical Turnoff Delay Time

17 ns

Fabrika Paket Adedi

3000

Part Aliases

SSM6L820R,LXHF(B

Fet Type

N and P-Channel

Ürün Durumu

Active

Power Max

1.4W (Ta)

Rds On Drainsource Resistance

39.1 mOhms, 45 mOhms

Kılıf / Paket

6-SMD, Flat Leads

Configuration

Dual

Ambalaj

MouseReel

Gate Charge Qg Max Vgs

3.2nC @ 4.5V, 6.7nC @4.5V