SSM6L56FE,LM

Specifications

Vds Drainsource Breakdown Voltage

20 V

Montaj Stili

SMD/SMT

Ürün Tipi

MOSFET

Id Continuous Drain Current

800 mA

Rds On Max Id Vgs

235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V

Technology

Si

Vgs Th Gatesource Threshold Voltage

1 V

Vgs Gatesource Voltage

- 8 V, + 8 V

Çalışma Sıcaklığı

150°C

Typical Turnon Delay Time

5.5 ns, 8 ns

Pd Power Dissipation

150 mW

Minimum Operating Temperature

- 55 C

Qg Gate Charge

1 nC, 1.6 nC

Current Continuous Drain Id25

800mA (Ta)

Tedarikçi Cihaz Paketi

ES6

Input Capacitance Ciss Max Vds

55pF @ 10V, 100pF @ 10V

Fet Feature

Logic Level Gate, 1.5V Drive

Kılıf / Paket

SOT-563, SOT-666

Ambalaj

MouseReel

Gate Charge Qg Max Vgs

1nC @ 10V

Power Max

150mW (Ta)

Birim Ağırlık

0.000106 oz

Rds On Drainsource Resistance

235 mOhms, 390 mOhms

Forward Transconductance Min

1.4 S, 0.5 S

Number Of Channels

2 Channel

Vgsth Max Id

1V @ 1mA

Fet Type

N and P-Channel

Typical Turnoff Delay Time

8.5 ns, 26 ns

Fabrika Paket Adedi

4000

Ürün Durumu

Active

Temel Ürün No

SSM6L56

Montaj Tipi

Surface Mount

RoHS

Details

Transistor Type

1 N-Channel, 1 P-Channel

Channel Mode

Enhancement

Drain To Source Voltage Vdss

20V

Transistor Polarity

N-Channel, P-Channel

Maks. Çalışma Sıcaklığı

+ 150 C