SSM6L36FE,LM

Specifications

Temel Parça No

SSM6L36

Terminal Formu

FLAT

Drainsource On Resistancemax

0.85Ohm

Jesd30 Code

R-PDSO-F6

Ds Breakdown Voltagemin

20V

Rds On Max Id Vgs

630m Ω @ 200mA, 5V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Terminal Sayısı

6

Çalışma Sıcaklığı

150°C TJ

Transistor Application

SWITCHING

Number Of Elements

2

Drain Currentmax Abs Id

0.5A

Input Capacitance Ciss Max Vds

46pF @ 10V

Fet Feature

Logic Level Gate

REACH Uyumluluk Kodu

unknown

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

500mA 330mA

Gate Charge Qg Max Vgs

1.23nC @ 4V

Continuous Drain Current Id

330mA

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

SOT-563, SOT-666

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

RoHS Durumu

RoHS Compliant

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fabrika Tedarik Süresi

16 Weeks

Parça Durumu

Active

Max Power Dissipation

150mW

Fet Type

N and P-Channel

Yayın Yılı

2009

Vgsth Max Id

1V @ 1mA

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Drain To Source Voltage Vdss

20V

Montaj

Surface Mount

Montaj Tipi

Surface Mount