Volume pricing
- 1+ pcs$0.27
- 10+ pcs$0.26
- 100+ pcs$0.24
- 500+ pcs$0.23
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Feature
- Standard
- Input Capacitance Ciss Max Vds
- 9.1pF @ 3V
- Current Continuous Drain Id25
- 100mA (Ta)
- Tedarikçi Cihaz Paketi
- USV
- Paket
- Tape & Reel (TR)
- Pd Power Dissipation
- 200 mW
- Vgs Gatesource Voltage
- - 20 V, + 20 V
- Çalışma Sıcaklığı
- 150°C
- Typical Turnon Delay Time
- 65 ns
- Vgs Th Gatesource Threshold Voltage
- 1.7 V
- Technology
- Si
- Id Continuous Drain Current
- 100 mA
- Ürün Tipi
- MOSFET
- Rds On Max Id Vgs
- 12Ohm @ 10mA, 4V
- Montaj Stili
- SMD/SMT
- Vds Drainsource Breakdown Voltage
- 30 V
- Drain To Source Voltage Vdss
- 30V
- Channel Mode
- Enhancement
- Maks. Çalışma Sıcaklığı
- + 150 C
- Transistor Polarity
- P-Channel
- RoHS
- Details
- Montaj Tipi
- Surface Mount
- Ürün Durumu
- Active
- Tradename
- MOSVI
- Vgsth Max Id
- 1.7V @ 100μA
- Number Of Channels
- 2 Channel
- Forward Transconductance Min
- 20 mS
- Typical Turnoff Delay Time
- 175 ns
- Fabrika Paket Adedi
- 3000
- Fet Type
- 2 P-Channel (Dual)
- Birim Ağırlık
- 0.000212 oz
- Rds On Drainsource Resistance
- 12 Ohms
- Power Max
- 200mW (Ta)
- Configuration
- Dual
- Ambalaj
- Cut Tape
- Kılıf / Paket
- 5-TSSOP, SC-70-5, SOT-353
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