SSM5N16FU,LF

Specifications

Rds On Drainsource Resistance

3 Ohms

Birim Ağırlık

0.000212 oz

Power Max

200mW (Ta)

Ambalaj

Cut Tape

Configuration

Dual

Kılıf / Paket

5-TSSOP, SC-70-5, SOT-353

Transistor Polarity

N-Channel

Maks. Çalışma Sıcaklığı

+ 150 C

Channel Mode

Enhancement

Drain To Source Voltage Vdss

20V

RoHS

Details

Montaj Tipi

Surface Mount

Tradename

MOSVI

Ürün Durumu

Active

Fet Type

2 N-Channel (Dual)

Typical Turnoff Delay Time

125 ns

Fabrika Paket Adedi

3000

Forward Transconductance Min

40 mS

Number Of Channels

2 Channel

Vgsth Max Id

1.1V @ 100μA

Technology

Si

Rds On Max Id Vgs

3Ohm @ 10mA, 4V

Ürün Tipi

MOSFET

Id Continuous Drain Current

100 mA

Montaj Stili

SMD/SMT

Vds Drainsource Breakdown Voltage

20 V

Input Capacitance Ciss Max Vds

9.3pF @ 3V

Fet Feature

Standard

Tedarikçi Cihaz Paketi

USV

Paket

Tape & Reel (TR)

Current Continuous Drain Id25

100mA (Ta)

Vgs Gatesource Voltage

- 10 V, + 10 V

Çalışma Sıcaklığı

150°C

Typical Turnon Delay Time

70 ns

Pd Power Dissipation

200 mW

Vgs Th Gatesource Threshold Voltage

600 mV