Volume pricing
- 1+ pcs$0.30
- 10+ pcs$0.28
- 100+ pcs$0.26
- 500+ pcs$0.25
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rds On Drainsource Resistance
- 3 Ohms
- Birim Ağırlık
- 0.000212 oz
- Power Max
- 200mW (Ta)
- Ambalaj
- Cut Tape
- Configuration
- Dual
- Kılıf / Paket
- 5-TSSOP, SC-70-5, SOT-353
- Transistor Polarity
- N-Channel
- Maks. Çalışma Sıcaklığı
- + 150 C
- Channel Mode
- Enhancement
- Drain To Source Voltage Vdss
- 20V
- RoHS
- Details
- Montaj Tipi
- Surface Mount
- Tradename
- MOSVI
- Ürün Durumu
- Active
- Fet Type
- 2 N-Channel (Dual)
- Typical Turnoff Delay Time
- 125 ns
- Fabrika Paket Adedi
- 3000
- Forward Transconductance Min
- 40 mS
- Number Of Channels
- 2 Channel
- Vgsth Max Id
- 1.1V @ 100μA
- Technology
- Si
- Rds On Max Id Vgs
- 3Ohm @ 10mA, 4V
- Ürün Tipi
- MOSFET
- Id Continuous Drain Current
- 100 mA
- Montaj Stili
- SMD/SMT
- Vds Drainsource Breakdown Voltage
- 20 V
- Input Capacitance Ciss Max Vds
- 9.3pF @ 3V
- Fet Feature
- Standard
- Tedarikçi Cihaz Paketi
- USV
- Paket
- Tape & Reel (TR)
- Current Continuous Drain Id25
- 100mA (Ta)
- Vgs Gatesource Voltage
- - 10 V, + 10 V
- Çalışma Sıcaklığı
- 150°C
- Typical Turnon Delay Time
- 70 ns
- Pd Power Dissipation
- 200 mW
- Vgs Th Gatesource Threshold Voltage
- 600 mV
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