Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj Tipi
- Surface Mount
- Polaritychannel Type
- PNP
- Resistor Base R1
- 10k Ω
- Transistor Type
- 2 PNP - Pre-Biased (Dual)
- Yayın Yılı
- 2014
- Dc Current Gain Hfe Min Ic Vce
- 50 @ 10mA 5V
- Power Max
- 200mW
- Parça Durumu
- Obsolete
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Element Material
- SILICON
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Additional Feature
- BUILT IN BIAS RESISTANCE RATIO IS 1
- Voltage Collector Emitter Breakdown Max
- 50V
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Ambalaj
- Cut Tape (CT)
- REACH Uyumluluk Kodu
- unknown
- Resistor Emitter Base R2
- 10k Ω
- Kurşunsuz Kodu
- yes
- Operating Temperature Max
- 150°C
- Current Collector Cutoff Max
- 500nA
- Frequency Transition
- 200MHz
- Transistor Application
- SWITCHING
- Number Of Elements
- 2
- Terminal Sayısı
- 6
- Yüzey Montaj
- YES
- Jesd30 Code
- R-PDSO-G6
- Currentcollector Ic Max
- 100mA
- Vce Saturation Max Ib Ic
- 300mV @ 250μA, 5mA
- Transition Frequency
- 200MHz
- Terminal Formu
- GULL WING
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