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RN1973(TE85L,F)

Toshiba Semiconductor and Storage

RN1973(TE85L,F)

BJT Transistors Arrays

RoHS: Compliant

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Compliant

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Specifications

Max Power Dissipation
200mW
Ambalaj
Tape & Reel (TR)
Transistor Element Material
SILICON
Kılıf / Paket
6-TSSOP, SC-88, SOT-363
Number Of Elements
2
Polaritychannel Type
NPN
Montaj Tipi
Surface Mount
Resistor Base R1
47k Ω
Parça Durumu
Active
Max Collector Current
100mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Power Max
200mW
Collectoremitter Breakdown Voltage
50V
Yayın Yılı
2014
Max Breakdown Voltage
50V
Montaj
Surface Mount
Current Collector Cutoff Max
100nA ICBO
Collector Emitter Voltage Vceo
300mV
Transistor Type
2 NPN - Pre-Biased (Dual)
RoHS Durumu
RoHS Compliant
Vce Saturation Max Ib Ic
300mV @ 250μA, 5mA
Fabrika Tedarik Süresi
12 Weeks
Dc Current Gain Hfe Min Ic Vce
120 @ 1mA 5V

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