Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Frequency Transition
- 250MHz
- Current Collector Cutoff Max
- 100nA ICBO
- Collector Emitter Voltage Vceo
- 300mV
- Collectoremitter Breakdown Voltage
- 50V
- Yayın Yılı
- 2014
- Max Breakdown Voltage
- 50V
- Montaj
- Surface Mount
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 1mA 5V
- Transistor Type
- 2 NPN - Pre-Biased (Dual)
- RoHS Durumu
- RoHS Compliant
- Vce Saturation Max Ib Ic
- 300mV @ 250μA, 5mA
- Fabrika Tedarik Süresi
- 12 Weeks
- Transistor Element Material
- SILICON
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Number Of Elements
- 2
- Max Power Dissipation
- 200mW
- Ambalaj
- Tape & Reel (TR)
- Max Collector Current
- 100mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Max
- 200mW
- Polaritychannel Type
- NPN
- Montaj Tipi
- Surface Mount
- Resistor Base R1
- 4.7k Ω
- Parça Durumu
- Active
Related Products
In Stock
Panjit
2SC164S_R1_00001
BJT Transistors Arrays
Diodes Incorporated
ACX114EUQ-13R
BJT Transistors Arrays
Diodes Incorporated
ACX114EUQ-7R
BJT Transistors Arrays
Diodes Incorporated
ACX114YUQ-13R
BJT Transistors Arrays
Diodes Incorporated
ACX114YUQ-7R
BJT Transistors Arrays
Diodes Incorporated
ACX115EUQ-13R
BJT Transistors Arrays
Diodes Incorporated
ACX115EUQ-7R
BJT Transistors Arrays
Diodes Incorporated
ACX124EUQ-13R
BJT Transistors Arrays