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RN1965(TE85L,F)

Toshiba Semiconductor and Storage

RN1965(TE85L,F)

BJT Transistors Arrays

In StockRoHS: Compliant

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RoHS

Compliant

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Specifications

Power Max
200mW
Parça Durumu
Active
REACH Uyumluluk Kodu
unknown
Resistor Base R1
2.2k Ω
Polaritychannel Type
NPN
Montaj Tipi
Surface Mount
Kılıf / Paket
6-TSSOP, SC-88, SOT-363
Ambalaj
Tape & Reel (TR)
Max Power Dissipation
200mW
Dc Current Gain Hfe Min Ic Vce
80 @ 10mA 5V
Resistor Emitter Base R2
47k Ω
Fabrika Tedarik Süresi
12 Weeks
Transistor Type
2 NPN - Pre-Biased (Dual)
Current Collector Cutoff Max
100nA ICBO
Collector Emitter Voltage Vceo
300mV
Frequency Transition
250MHz
Max Breakdown Voltage
50V
Collectoremitter Breakdown Voltage
50V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Max Collector Current
100mA
Transistor Element Material
SILICON
Number Of Elements
2
RoHS Durumu
RoHS Compliant
Vce Saturation Max Ib Ic
300mV @ 250μA, 5mA
Montaj
Surface Mount
Yayın Yılı
2014

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