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RFM04U6P(TE12L,F)

Toshiba Semiconductor and Storage

RFM04U6P(TE12L,F)

RF MOSFETs Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.36
  • 10+ pcs$0.34
  • 100+ pcs$0.32
  • 500+ pcs$0.30

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RoHS

Compliant

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Specifications

Gate To Source Voltage Vgs
3V
REACH Uyumluluk Kodu
unknown
RoHS Durumu
RoHS Compliant
Ambalaj
Cut Tape (CT)
Operating Mode
ENHANCEMENT MODE
Parça Durumu
Discontinued
Configuration
Single
Operating Temperature Max
150°C
Power Output
4.3W
Yayın Yılı
2003
Usage Level
Automotive grade
Current Test
500mA
Drain Currentmax Abs Id
2A
Nem Hassasiyeti (MSL)
1 (Unlimited)
Fet Technology
METAL-OXIDE SEMICONDUCTOR
Drain To Source Voltage Vdss
16V
Fabrika Tedarik Süresi
18 Weeks
ECCN Kodu
EAR99
Yüzey Montaj
YES
Max Power Dissipation
7W
Gain
13.3dB
Kılıf / Paket
TO-243AA
Voltage Test
6V
Continuous Drain Current Id
2A
Akım Değeri
2A
Transistor Type
N-Channel
Frekans
470MHz

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