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MT3S20TU(TE85L)

Toshiba Semiconductor and Storage

MT3S20TU(TE85L)

RF BJT Transistors

In StockRoHS: Compliant

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Specifications

Max Collector Current
80mA
Ambalaj
Cut Tape (CT)
Element Configuration
Single
Max Power Dissipation
900mW
Max Breakdown Voltage
12V
Collector Emitter Voltage Vceo
12V
Yayın Yılı
2014
Polaritychannel Type
NPN
REACH Uyumluluk Kodu
unknown
Transition Frequency
5000MHz
Noise Figure Db Typ F
1.45dB @ 20mA, 5V
ECCN Kodu
EAR99
Emitter Base Voltage Vebo
1.5V
Çalışma Sıcaklığı
150°C TJ
Fabrika Tedarik Süresi
12 Weeks
Transistor Type
NPN
Collectoremitter Breakdown Voltage
12V
Gain
12dB
Kılıf / Paket
3-SMD, Flat Lead
Frequency Transition
7GHz
Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS Durumu
RoHS Compliant
Montaj Tipi
Surface Mount
Dc Current Gain Hfe Min Ic Vce
100 @ 50mA 5V
Continuous Collector Current
80mA
Montaj
Surface Mount
Parça Durumu
Active

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