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MT3S20P(TE12L,F)

Toshiba Semiconductor and Storage

MT3S20P(TE12L,F)

RF BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.99
  • 10+ pcs$0.93
  • 100+ pcs$0.88
  • 500+ pcs$0.83

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RoHS

Compliant

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Specifications

Parça Durumu
Active
Noise Figure Db Typ F
1.45dB @ 1GHz
Montaj
Surface Mount
REACH Uyumluluk Kodu
unknown
Transition Frequency
5000MHz
Polaritychannel Type
NPN
Configuration
Single
Montaj Tipi
Surface Mount
Dc Current Gain Hfe Min Ic Vce
100 @ 50mA 5V
Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS Durumu
RoHS Compliant
Yayın Yılı
2014
Max Breakdown Voltage
12V
Power Max
1.8W
Frequency Transition
7GHz
Max Power Dissipation
1.8W
Ambalaj
Tape & Reel (TR)
Kılıf / Paket
TO-243AA
Gain
16.5dB
Max Collector Current
80mA
Transistor Type
NPN
Collectoremitter Breakdown Voltage
12V
Çalışma Sıcaklığı
150°C TJ
Fabrika Tedarik Süresi
12 Weeks

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