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MT3S16U(TE85L,F)

Toshiba Semiconductor and Storage

MT3S16U(TE85L,F)

RF BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.19
  • 10+ pcs$0.18
  • 100+ pcs$0.17
  • 500+ pcs$0.16

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Compliant

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Specifications

Transistor Type
NPN
Collectoremitter Breakdown Voltage
5V
Çalışma Sıcaklığı
125°C TJ
Fabrika Tedarik Süresi
16 Weeks
Kılıf / Paket
SC-70, SOT-323
Gain
4.5dBi
Montaj
Surface Mount
Parça Durumu
Active
Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS Durumu
RoHS Compliant
Continuous Collector Current
60mA
Dc Current Gain Hfe Min Ic Vce
80 @ 5mA 1V
Montaj Tipi
Surface Mount
Frekans
4GHz
Element Configuration
Single
Max Power Dissipation
100mW
Ambalaj
Tape & Reel (TR)
Collector Base Voltage Vcbo
10V
Hfemin
80
Weight
6.208546mg
Max Breakdown Voltage
5V
Max Collector Current
60mA
Noise Figure Db Typ F
2.4dB @ 1GHz
Transition Frequency
2000MHz
Emitter Base Voltage Vebo
2V
Yayın Yılı
2014
Collector Emitter Voltage Vceo
5V
Polaritychannel Type
NPN

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