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MT3S111TU,LF

Toshiba Semiconductor and Storage

MT3S111TU,LF

RF BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.40
  • 10+ pcs$0.38
  • 100+ pcs$0.35
  • 500+ pcs$0.33

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RoHS

Compliant

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Specifications

Parça Durumu
Active
Noise Figure Db Typ F
0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Montaj Tipi
Surface Mount
Dc Current Gain Hfe Min Ic Vce
200 @ 30mA 5V
RoHS Durumu
RoHS Compliant
Nem Hassasiyeti (MSL)
1 (Unlimited)
Frequency Transition
10GHz
Power Max
800mW
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Voltage Collector Emitter Breakdown Max
6V
Ambalaj
Tape & Reel (TR)
Gain
12.5dB
Kılıf / Paket
3-SMD, Flat Lead
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Fabrika Tedarik Süresi
12 Weeks
Çalışma Sıcaklığı
150°C TJ
Currentcollector Ic Max
100mA
Transistor Type
NPN

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