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MT3S111(TE85L,F)

Toshiba Semiconductor and Storage

MT3S111(TE85L,F)

RF BJT Transistors

In StockRoHS: Compliant

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Specifications

Transistor Type
NPN
Currentcollector Ic Max
100mA
Çalışma Sıcaklığı
150°C TJ
Fabrika Tedarik Süresi
12 Weeks
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Gain
12dB
Ambalaj
Tape & Reel (TR)
Yüzey Montaj
YES
Power Dissipationmax Abs
0.7W
Voltage Collector Emitter Breakdown Max
6V
Power Max
700mW
Frequency Transition
11.5GHz
Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS Durumu
RoHS Compliant
Polaritychannel Type
NPN
Configuration
Single
Montaj Tipi
Surface Mount
Dc Current Gain Hfe Min Ic Vce
200 @ 30mA 5V
Noise Figure Db Typ F
1.2dB @ 1GHz
Transition Frequency
9000MHz
Parça Durumu
Active
ECCN Kodu
EAR99

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