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MT3S111P(TE12L,F)

Toshiba Semiconductor and Storage

MT3S111P(TE12L,F)

RF BJT Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

Kılıf / Paket
TO-243AA
Gain
10.5dB
Transistor Type
NPN
Fabrika Tedarik Süresi
12 Weeks
Çalışma Sıcaklığı
150°C TJ
Currentcollector Ic Max
100mA
Power Max
1W
Voltage Collector Emitter Breakdown Max
6V
Frequency Transition
8GHz
Power Dissipationmax Abs
0.3W
Ambalaj
Tape & Reel (TR)
Yüzey Montaj
YES
Polaritychannel Type
NPN
Configuration
Single
Dc Current Gain Hfe Min Ic Vce
200 @ 30mA 5V
Montaj Tipi
Surface Mount
RoHS Durumu
RoHS Compliant
Nem Hassasiyeti (MSL)
1 (Unlimited)
Parça Durumu
Active
ECCN Kodu
EAR99
Noise Figure Db Typ F
1.25dB @ 1GHz
Transition Frequency
6000MHz

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