HN4B102J(TE85L,F)

Specifications

Continuous Collector Current

- 1.8 A, 2 A

Configuration

Dual

Montaj Tipi

Surface Mount

Ürün Durumu

Active

Ihs Manufacturer

TOSHIBA CORP

Operating Temperaturemax

150 °C

Dc Current Gainmin Hfe

40

Collector Emitter Voltage Vceo Max

30 V

Kılıf / Paket

SC-74A, SOT-753

Transistor Type

NPN, PNP

Ürün Tipi

BJTs - Bipolar Transistors

Currentcollector Ic Max

1.8A, 2A

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

2

Emitter Base Voltage Vebo

7 V

Samacsys Description

Silicon PNP / NPN Epitaxial Type Transistor

Minimum Operating Temperature

- 55 C

REACH Uyumluluk Kodu

unknown

Jesd30 Code

R-PDSO-G5

Package Shape

RECTANGULAR

Terminal Pozisyonu

DUAL

Collector Currentmax Ic

2 A

Vcesatmax

0.14 V

Voltage Collector Emitter Breakdown Max

30V

Montaj Stili

SMD/SMT

Dc Current Gain Hfe Max

500

Collector Base Voltage Vcbo

60 V, 30 V

Vce Saturation Max Ib Ic

140mV @ 20mA, 600mA, 200mV @ 20mA, 600mA

RoHS

Details

Üretici Parça No

HN4B102J(TE85L,F)

Package Style

SMALL OUTLINE

Dc Current Gain Hfe Min Ic Vce

200 @ 200mA, 2V

Number Of Terminals

5

Power Max

750mW

Risk Rank

5.76

Current Collector Cutoff Max

100nA (ICBO)

Transistor Element Material

SILICON

Pd Power Dissipation

1.1 W

Terminal Formu

GULL WING

Yüzey Montaj

YES