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C3 ChipZentronix
HN4B04J(TE85L,F)

Toshiba Semiconductor and Storage

HN4B04J(TE85L,F)

Arrays BJT Transistors

In StockRoHS: Compliant

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Specifications

Gain Bandwidth Product
300MHz
Yayın Yılı
2014
Collector Emitter Voltage Vceo
250mV
Emitter Base Voltage Vebo
5V
Polarity
NPN, PNP
Max Collector Current
500mA
Element Configuration
Dual
Max Power Dissipation
300mW
Ambalaj
Cut Tape (CT)
Collector Base Voltage Vcbo
35V
Hfemin
70
Max Breakdown Voltage
30V
Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS Durumu
RoHS Compliant
Montaj Tipi
Surface Mount
Dc Current Gain Hfe Min Ic Vce
70 @ 100mA 1V
Montaj
Surface Mount
Vce Saturation Max Ib Ic
250mV @ 10mA, 100mA
Collectoremitter Saturation Voltage
100mV
Parça Durumu
Obsolete
Transistor Type
NPN, PNP
Collectoremitter Breakdown Voltage
30V
Çalışma Sıcaklığı
150°C TJ
Kılıf / Paket
SC-74A, SOT-753
Power Max
300mW
Current Collector Cutoff Max
100μA ICBO
Frequency Transition
200MHz

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