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HN4A06J(TE85L,F)

Toshiba Semiconductor and Storage

HN4A06J(TE85L,F)

Arrays BJT Transistors

RoHS: Compliant

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Specifications

Montaj
Surface Mount
Vce Saturation Max Ib Ic
300mV @ 1mA, 10mA
Parça Durumu
Discontinued
Collectoremitter Saturation Voltage
-300mV
Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS Durumu
RoHS Compliant
Dc Current Gain Hfe Min Ic Vce
200 @ 2mA 6V
Montaj Tipi
Surface Mount
Current Collector Cutoff Max
100nA ICBO
Power Max
300mW
Çalışma Sıcaklığı
150°C TJ
Transistor Type
2 PNP (Dual) Matched Pair, Common Emitter
Collectoremitter Breakdown Voltage
120V
Kılıf / Paket
SC-74A, SOT-753
Emitter Base Voltage Vebo
-5V
Collector Emitter Voltage Vceo
300mV
Yayın Yılı
2009
Gain Bandwidth Product
100MHz
Ambalaj
Cut Tape (CT)
Collector Base Voltage Vcbo
-120V
Element Configuration
Dual
Max Power Dissipation
300mW
Hfemin
200
Max Breakdown Voltage
120V
Polarity
PNP
Max Collector Current
100mA

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