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C3 ChipZentronix
HN3C51F-GR(TE85L,F

Toshiba Semiconductor and Storage

HN3C51F-GR(TE85L,F

Arrays BJT Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

Pin Sayısı
6
Collector Emitter Voltage Vceo
300mV
Gain Bandwidth Product
100MHz
Yayın Yılı
2014
Emitter Base Voltage Vebo
5V
Number Of Elements
2
Max Collector Current
100mA
Polarity
NPN
Hfemin
200
Max Breakdown Voltage
120V
Ambalaj
Cut Tape (CT)
Collector Base Voltage Vcbo
120V
Max Power Dissipation
300mW
Element Configuration
Dual
Dc Current Gain Hfe Min Ic Vce
200 @ 2mA 6V
Montaj Tipi
Surface Mount
Power Dissipation
300mW
Frekans
100MHz
Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS Durumu
RoHS Compliant
Vce Saturation Max Ib Ic
300mV @ 1mA, 10mA
Collectoremitter Saturation Voltage
300mV
Parça Durumu
Obsolete
Montaj
Surface Mount
Kılıf / Paket
SC-74, SOT-457
Çalışma Sıcaklığı
150°C TJ
Transistor Type
2 NPN (Dual)
Collectoremitter Breakdown Voltage
120V
Current Collector Cutoff Max
100nA ICBO

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