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C3 ChipZentronix
HN3C51F-BL(TE85L,F

Toshiba Semiconductor and Storage

HN3C51F-BL(TE85L,F

Arrays BJT Transistors

In StockRoHS: Compliant

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Compliant

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Specifications

RoHS Durumu
RoHS Compliant
Nem Hassasiyeti (MSL)
1 (Unlimited)
Frekans
100MHz
Power Dissipation
300mW
Dc Current Gain Hfe Min Ic Vce
350 @ 2mA 6V
Montaj Tipi
Surface Mount
Montaj
Surface Mount
Parça Durumu
Obsolete
Collectoremitter Saturation Voltage
300mV
Vce Saturation Max Ib Ic
300mV @ 1mA, 10mA
Collectoremitter Breakdown Voltage
120V
Transistor Type
2 NPN (Dual)
Çalışma Sıcaklığı
150°C TJ
Kılıf / Paket
SC-74, SOT-457
Radyasyon Dayanımı
No
Current Collector Cutoff Max
100nA ICBO
Gain Bandwidth Product
100MHz
Yayın Yılı
2009
Collector Emitter Voltage Vceo
300mV
Pin Sayısı
6
Number Of Elements
2
Emitter Base Voltage Vebo
5V
Polarity
NPN
Max Collector Current
100mA
Max Power Dissipation
300mW
Element Configuration
Dual
Collector Base Voltage Vcbo
120V
Ambalaj
Cut Tape (CT)
Max Breakdown Voltage
120V
Hfemin
200

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