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HN2S03T(TE85L)

Toshiba Semiconductor and Storage

HN2S03T(TE85L)

Rectifier Diode Array

In StockRoHS: Compliant

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Specifications

Peak Nonrepetitive Surge Current
1A
Forward Current
50mA
Kılıf / Paket
4-SMD, Flat Leads
Radyasyon Dayanımı
No
Max Reverse Voltage Dc
20V
Montaj
Surface Mount
Maks. Çalışma Sıcaklığı
100°C
Parça Durumu
Obsolete
Genişlik
900μm
Min. Çalışma Sıcaklığı
-40°C
RoHS Durumu
RoHS Compliant
Nem Hassasiyeti (MSL)
1 (Unlimited)
Yükseklik
520μm
Montaj Tipi
Surface Mount
Ambalaj
Cut Tape (CT)
Max Power Dissipation
70mW
Max Repetitive Reverse Voltage Vrrm
25V
Element Configuration
Dual
Voltage Forward Vf Max If
550mV @ 50mA
Max Forward Surge Current Ifsm
1A
Speed
Small Signal =< 200mA (Io), Any Speed
ECCN Kodu
EAR99
Peak Reverse Current
500nA
Diode Type
Schottky
Yayın Yılı
2014
Operating Temperature Junction
125°C Max
Uzunluk
1.2mm
Pin Sayısı
4
Diode Configuration
2 Independent
Current Reverse Leakage Vr
500nA @ 20V
Average Rectified Current
50mA

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