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C3 ChipZentronix
HN2C01FEYTE85LF

Toshiba Semiconductor and Storage

HN2C01FEYTE85LF

Arrays BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.12
  • 10+ pcs$0.11
  • 100+ pcs$0.10
  • 500+ pcs$0.10

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RoHS

Compliant

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Specifications

Ambalaj
Cut Tape (CT)
Collector Base Voltage Vcbo
60V
Max Power Dissipation
100mW
Element Configuration
Dual
Hfemin
120
Max Breakdown Voltage
50V
Polarity
NPN
Max Collector Current
150mA
Emitter Base Voltage Vebo
5V
Collector Emitter Voltage Vceo
250mV
Gain Bandwidth Product
60MHz
Yayın Yılı
2014
Current Collector Cutoff Max
100nA ICBO
Power Max
100mW
Çalışma Sıcaklığı
150°C TJ
Transistor Type
2 NPN (Dual)
Collectoremitter Breakdown Voltage
50V
Kılıf / Paket
SOT-563, SOT-666
Montaj
Surface Mount
Vce Saturation Max Ib Ic
250mV @ 10mA, 100mA
Collectoremitter Saturation Voltage
100mV
Parça Durumu
Obsolete
Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS Durumu
RoHS Compliant
Dc Current Gain Hfe Min Ic Vce
120 @ 2mA 6V
Montaj Tipi
Surface Mount

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