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C3 ChipZentronix
HN2A01FE-Y(TE85L,F

Toshiba Semiconductor and Storage

HN2A01FE-Y(TE85L,F

Arrays BJT Transistors

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Specifications

Montaj Tipi
Surface Mount
Dc Current Gain Hfe Min Ic Vce
120 @ 2mA 6V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Yayın Yılı
2014
Vce Saturation Max Ib Ic
300mV @ 10mA, 100mA
Parça Durumu
Obsolete
Kılıf / Paket
SOT-563, SOT-666
Transistor Type
2 PNP (Dual)
Currentcollector Ic Max
150mA
Çalışma Sıcaklığı
150°C TJ
Voltage Collector Emitter Breakdown Max
50V
Tedarikçi Cihaz Paketi
ES6
Power Max
100mW
Current Collector Cutoff Max
100nA ICBO
Frequency Transition
80MHz
Ambalaj
Tape & Reel (TR)

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