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HN1C03F-B(TE85L,F)

Toshiba Semiconductor and Storage

HN1C03F-B(TE85L,F)

Arrays BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.26
  • 10+ pcs$0.25
  • 100+ pcs$0.23
  • 500+ pcs$0.22

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Compliant

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Specifications

Collector Base Voltage Vcbo
50V
Ambalaj
Tape & Reel (TR)
Max Power Dissipation
300mW
Element Configuration
Dual
Max Breakdown Voltage
20V
Voltage Collector Emitter Breakdown Max
20V
Hfemin
200
Tedarikçi Cihaz Paketi
SM6
Polarity
NPN
Max Collector Current
300mA
Emitter Base Voltage Vebo
25V
Number Of Elements
2
Collector Emitter Voltage Vceo
20V
Gain Bandwidth Product
30MHz
Yayın Yılı
2009
Pin Sayısı
6
Frequency Transition
30MHz
Current Collector Cutoff Max
100nA ICBO
Power Max
300mW
Fabrika Tedarik Süresi
12 Weeks
Currentcollector Ic Max
300mA
Çalışma Sıcaklığı
150°C TJ
Collectoremitter Breakdown Voltage
20V
Transistor Type
2 NPN (Dual)
Kılıf / Paket
SC-74, SOT-457
Radyasyon Dayanımı
No
Montaj
Surface Mount
Maks. Çalışma Sıcaklığı
150°C
Collectoremitter Saturation Voltage
42mV
Parça Durumu
Active
Vce Saturation Max Ib Ic
100mV @ 3mA, 30mA
Min. Çalışma Sıcaklığı
-55°C
RoHS Durumu
RoHS Compliant
Nem Hassasiyeti (MSL)
1 (Unlimited)
Power Dissipation
300mW
Frekans
30MHz
Dc Current Gain Hfe Min Ic Vce
350 @ 4mA 2V
Montaj Tipi
Surface Mount

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