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C3 ChipZentronix
HN1C01FYTE85LF

Toshiba Semiconductor and Storage

HN1C01FYTE85LF

Arrays BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.26
  • 10+ pcs$0.25
  • 100+ pcs$0.24
  • 500+ pcs$0.22

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RoHS

Compliant

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Specifications

Max Power Dissipation
300mW
Element Configuration
Dual
Collector Base Voltage Vcbo
60V
Ambalaj
Cut Tape (CT)
Max Breakdown Voltage
50V
Hfemin
120
Polarity
NPN
Max Collector Current
150mA
Emitter Base Voltage Vebo
5V
Yayın Yılı
2009
Gain Bandwidth Product
80MHz
Collector Emitter Voltage Vceo
250mV
Power Max
300mW
Current Collector Cutoff Max
100nA ICBO
Collectoremitter Breakdown Voltage
50V
Transistor Type
2 NPN (Dual)
Fabrika Tedarik Süresi
12 Weeks
Çalışma Sıcaklığı
125°C TJ
Kılıf / Paket
SC-74, SOT-457
Montaj
Surface Mount
Collectoremitter Saturation Voltage
100mV
Parça Durumu
Active
Vce Saturation Max Ib Ic
250mV @ 10mA, 100mA
RoHS Durumu
RoHS Compliant
Nem Hassasiyeti (MSL)
1 (Unlimited)
Montaj Tipi
Surface Mount
Dc Current Gain Hfe Min Ic Vce
120 @ 2mA 6V

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